Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory Material

Authors
Wu ZheLee SuyounJeung-hyun JeongKim InhoKim Seul-ChamKyu Hwan OhCHEONG, BYUNG KI
Citation
Materials Research Society
URI
https://pubs.kist.re.kr/handle/201004/103495
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KIST Conference Paper > Others
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