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Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode

Authors

Dae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Dongbok Lee; Hyun-Mi Kim; Ki-Bum Kim

Citation

MRS 2006 spring meeting

Keywords

phase change memory; switching reliability; oxidized TiN; TiN electrode

URI

https://pubs.kist.re.kr/handle/201004/103999

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KIST Conference Paper > Others

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