Effect of Oxygen Stoichiometry on Resistive Switching Characteristics of Pr0.7Ca0.3MnO3 Thin Films Grown by Pulsed Laser Deposition

Authors
Kim, Young HwanKim Dong SooJung, Sung MokKim, Seong IlKim, Yong Tae
Citation
Materials Research Society 2006 spring meeting
Keywords
memory; oxide
URI
https://pubs.kist.re.kr/handle/201004/104125
Appears in Collections:
KIST Conference Paper > Others
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