Material and Electrical Characteristics of SbXTe100-X for Phase Change Random Access Memory

Authors
Kim, Yong TaeKwon Young SukYoum Min SooSung Man Young
Citation
Asia-pacific Workshop on Advanced semiconductor Devices 2006
Keywords
PRAM; SbTe
URI
https://pubs.kist.re.kr/handle/201004/104206
Appears in Collections:
KIST Conference Paper > Others
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