Reduction of phase changing voltage in Phase change random access memory by using edge contact structure

Authors
Kim, Yong TaeMinsoo YoumSHIN, SUN ILKim, Seong Il
Citation
International Conference on Electrical Engineering 2004, v.1, pp.20 - 23
URI
https://pubs.kist.re.kr/handle/201004/105573
Appears in Collections:
KIST Conference Paper > Others
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