Writing Current Reduction for High-density Phase-change RAM

Authors
Y.N. Hwang,S. H. LeeS. J. AhnS. Y. LeeK. C. RyooH. S. HongKoo, Hyun CheolY. FaiJ. H. OhH. J. KimW. C. JeongJ. H. ParkH. HoriiY. H. HaJ.H. YiG. H. KohG. T. JeongH. S. JeongKinam Kim
Citation
IEDM Technical Digest, pp.37.1.1 - 37.1.4
Keywords
writing Current; phase change RAM
URI
https://pubs.kist.re.kr/handle/201004/105810
Appears in Collections:
KIST Conference Paper > Others
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