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dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorY. M. Park-
dc.contributor.authorShin, Jae Cheol-
dc.contributor.authorJ. G. Lim-
dc.contributor.authorPark, Young Ju-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorHan, Il Ki-
dc.contributor.authorCho, Woon Jo-
dc.contributor.authorLee, Jung Il-
dc.contributor.authorH. S. Lee-
dc.contributor.authorJ. Y. Lee-
dc.date.accessioned2024-01-13T11:00:40Z-
dc.date.available2024-01-13T11:00:40Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105932-
dc.languageEnglish-
dc.subjectInGaAs-
dc.subjectGaAs-
dc.subjectquantum dots-
dc.subjectphotoluminescence-
dc.titleStructural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication-
dc.title.alternative광통신 응용을 위하여 원자층성장기법으로 성장된 InGaAs/GaAs 양자점의 구조적 광학적 특성-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProc.of Asia-Pacific Workshop on Fundamentals & Application of Advanced Semiconductor Device AWAD'03, pp.167 - 172-
dc.citation.titleProc.of Asia-Pacific Workshop on Fundamentals & Application of Advanced Semiconductor Device AWAD'03-
dc.citation.startPage167-
dc.citation.endPage172-
dc.citation.conferencePlaceKO-
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