DSpace at KIST: Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect.

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DC Field	Value	Language
dc.contributor.author	Kim Yong Tae	-
dc.contributor.author	심현상	-
dc.date.accessioned	2024-01-13T12:31:47Z	-
dc.date.available	2024-01-13T12:31:47Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/106802	-
dc.language	English	-
dc.subject	구리배선	-
dc.subject	펄스플라즈마	-
dc.subject	원자층 증착	-
dc.subject	텅스텐질화막	-
dc.subject	초고집적소자	-
dc.subject	W-N	-
dc.subject	확산방지막	-
dc.title	Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect.	-
dc.title.alternative	구리배선을 위한 펄스플라즈마 원자층박막증착방법에 의한 텅스텐질화 확산방지막의 특성	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2, pp.115 - 118	-
dc.citation.title	2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2	-
dc.citation.startPage	115	-
dc.citation.endPage	118	-
dc.citation.conferencePlace	JA	-

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