Effects of charge trapping on the asymmetrical shift of memory window in MFIS devices

Authors
이용원강동노용한Sung-Kyun LeeKim Yong Tae
Citation
International Joint Conference on the Applications of Ferroelectrics 2002 (IFFF 2002), pp.231
Keywords
charge trapping; asymmetric shift; memory window; 강유전체소자
URI
https://pubs.kist.re.kr/handle/201004/106913
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE