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dc.contributor.authorKim Yong Tae-
dc.contributor.author김익수-
dc.contributor.authorPARK YOUNG KYUN-
dc.date.accessioned2024-01-13T15:31:00Z-
dc.date.available2024-01-13T15:31:00Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108339-
dc.languageEnglish-
dc.subjectYMnO₃-
dc.titleImprovement of Memory windows in YMnO₃/Si Ferroelectric gate FET [Invited Paper]-
dc.title.alternativeYMnO₃/Si 강유전체 게이트를 이용한 FET의 Memory window 특성향상 [Invited Paper]-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2000 Asia-Pacific Workshop on Fundamental and Application Advanced Semiconductor Devices, pp.133 - 138-
dc.citation.title2000 Asia-Pacific Workshop on Fundamental and Application Advanced Semiconductor Devices-
dc.citation.startPage133-
dc.citation.endPage138-
dc.citation.conferencePlaceJA-
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