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Creation of deep levels in horizontal bridgman grown GaAs by hydrogenation.

Title
Creation of deep levels in horizontal bridgman grown GaAs by hydrogenation.
Authors
김은규; 조훈형; 민석기; 김재봉; 장진
Keywords
deep level; hydrogenation; GaAs
Issue Date
1988-09
Publisher
Applied physics letters
Citation
v. 53, no. 10, 856-858
URI
https://pubs.kist.re.kr/handle/201004/10848
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KIST Publication > Article
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