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Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy

Title: Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy

Authors: 김성일; H.H. Tan; C. Jagadish; L.V. Dao; M. Gal

Keywords: delta-doped; quantum wire; MOCVD

Issue Date: 1998-12

Publisher: Conference on Optoelectronic and Microelectronic Materials And Devices (COMMAD'98)

Citation: , 145-146

URI: https://pubs.kist.re.kr/handle/201004/10879

Appears in Collections:: KIST Publication > Conference Paper

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