Fabrication and characterization of planar resonant tunneling devices incorporating Inas self-assembled quantum dots

Authors
정석구황성우PARK JEONG HOKIM YOUNKIM EUN KYU
Citation
Proc. 11th Inter. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, pp.39
Keywords
resonant tunneling device; planar-type; MOCVD; single quantum dot; self-assembling
URI
https://pubs.kist.re.kr/handle/201004/109167
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KIST Conference Paper > Others
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