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Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure.

Other Titles

InGaAs/InGaAsP 단일양자우물구조의 impurity free vacancy intermixing 에서 유전체 - 반도체 덮개층 조합 효과 =

Authors

이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원

Citation

제 6 회 광전자공학 학술회의 논문집, pp.111 - 112

Keywords

양자우물무질서

URI

https://pubs.kist.re.kr/handle/201004/109828

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KIST Conference Paper > Others

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