DSpace at KIST: MOCVD growth of AlN, GaN/Si using an N-atom source based on a dielect barrier discharge method

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DC Field	Value	Language
dc.contributor.author	KIM JIN SANG	-
dc.contributor.author	Kum Dong Wha	-
dc.contributor.author	이지화	-
dc.date.accessioned	2024-01-13T18:30:36Z	-
dc.date.available	2024-01-13T18:30:36Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/109929	-
dc.language	English	-
dc.subject	MOCVD	-
dc.title	MOCVD growth of AlN, GaN/Si using an N-atom source based on a dielect barrier discharge method	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	Proc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998, pp.476 - 479	-
dc.citation.title	Proc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998	-
dc.citation.startPage	476	-
dc.citation.endPage	479	-
dc.citation.conferencePlace	JA	-

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