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Fabrication of metal-ferroelectric-insulator-semiconductor field effect transistor (MEFISFET) using Pt-SrBi//2Ta//2O//9-Y//2O//3-Si structure

Authors

Ho Nyung Lee; Kim Yong Tae; 이창우; 임명호; T. S. Kalkur

Citation

Proc. of solid state devices and materials, pp.382 - 383

Keywords

MEFISFET

URI

https://pubs.kist.re.kr/handle/201004/110644

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KIST Conference Paper > Others

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