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dc.contributor.authorKum Dong Wha-
dc.contributor.authorByun Dongjin-
dc.contributor.author정재식-
dc.contributor.authorKIM BYUNG HO-
dc.contributor.authorKOH SEOK KEUN-
dc.contributor.authorCHOI WON-KOOK-
dc.contributor.authorPark Dal keun-
dc.date.accessioned2024-01-13T20:33:48Z-
dc.date.available2024-01-13T20:33:48Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111190-
dc.languageEnglish-
dc.subjectreactive ion beam-
dc.titleReactive ion (N₂+) beam treatment of sapphire for GaN deposition-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe second International Conference on Nitride Semiconductors -ICNS'97-, P2-39, October 27-31, 1997,, pp.314 - ?-
dc.citation.titleThe second International Conference on Nitride Semiconductors -ICNS'97-, P2-39, October 27-31, 1997,-
dc.citation.startPage314-
dc.citation.endPage?-
dc.citation.conferencePlaceJA-
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