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dc.contributor.authorSON CHANG-SIK-
dc.contributor.author전인상-
dc.contributor.author한철구-
dc.contributor.author이정훈-
dc.contributor.authorJIN HYOUN CHER-
dc.contributor.authorKIM MOO SUNG-
dc.contributor.authorMin Suk-Ki-
dc.date.accessioned2024-01-13T22:03:05Z-
dc.date.available2024-01-13T22:03:05Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111943-
dc.languageEnglish-
dc.subjectInGaAs-
dc.titleRelaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs(311)A grown by molecular beam epitaxy(MBE).-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationBulletin of the Korean physical society, v.v. 13, no.no. 1, pp.128 - ?-
dc.citation.titleBulletin of the Korean physical society-
dc.citation.volumev. 13-
dc.citation.numberno. 1-
dc.citation.startPage128-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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