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Characteristics of amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization.

Authors

Kim Yong Tae; 이창우; 박상규; Min Suk-Ki

Citation

Int'l electron devices and materials symp., pp.?

URI

https://pubs.kist.re.kr/handle/201004/112061

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KIST Conference Paper > Others

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