DSpace at KIST: Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.

Browse

My Repository

DSpace at KISTKIST Publication Article

Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.

Title: Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.

Authors: 김용; 김성일; 엄경숙; 이주천; 곽명현; 마동성; 김무성; 민석기

Keywords: carbon doping; MOCVD; GaAs

Issue Date: 1993-01

Publisher: Journal of crystal growth

Citation: v. 126, 441-446

URI: https://pubs.kist.re.kr/handle/201004/11213

ISSN: 0022-0248

Appears in Collections:: KIST Publication > Article

Files in This Item:

Export: RIS (EndNote); XLS (Excel); XML

Show Full Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE