DSpace at KIST: Undoped and Si-doped GaAs layer grown at low temperature by molecular beam epitaxy.

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DC Field	Value	Language
dc.contributor.author	KIM EUN KYU	-
dc.contributor.author	Min Suk-Ki	-
dc.contributor.author	T. G. Kim	-
dc.contributor.author	H. Y. Cho	-
dc.contributor.author	H. S. Kim	-
dc.contributor.author	J. H. Park	-
dc.date.accessioned	2024-01-13T23:01:31Z	-
dc.date.available	2024-01-13T23:01:31Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/112385	-
dc.language	English	-
dc.subject	GaAs epilayer	-
dc.subject	low temperature growth	-
dc.subject	molecular beam epitaxy	-
dc.title	Undoped and Si-doped GaAs layer grown at low temperature by molecular beam epitaxy.	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Proc. KITE summer conf. '92, v.v. 15, no.no. 1, pp.298 - 301	-
dc.citation.title	Proc. KITE summer conf. '92	-
dc.citation.volume	v. 15	-
dc.citation.number	no. 1	-
dc.citation.startPage	298	-
dc.citation.endPage	301	-
dc.citation.conferencePlace	KO	-

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