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dc.contributor.authorKIM EUN KYU-
dc.contributor.authorCHO HOON YOUNG-
dc.contributor.authorKIM YOUN-
dc.contributor.author김현수-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorM. S. Kim-
dc.date.accessioned2024-01-13T23:03:48Z-
dc.date.available2024-01-13T23:03:48Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112523-
dc.languageEnglish-
dc.subjectrapid thermal annealing-
dc.subjectdeep electron trap-
dc.subjectGaAs-on-Si-
dc.subjectMOCVD-
dc.titleRapid thermal annealing dependence of deep electron traps in GaAs-on-Si grown by MOCVD.-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProc. 4th Asia Pacific phys. conf., v.v. 1, pp.584 - 587-
dc.citation.titleProc. 4th Asia Pacific phys. conf.-
dc.citation.volumev. 1-
dc.citation.startPage584-
dc.citation.endPage587-
dc.citation.conferencePlaceSI-
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