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dc.contributor.authorKim Seong Il-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorKIM YOUN-
dc.contributor.authorKIM MOO SUNG-
dc.contributor.authorEOM KYUNG SOOK-
dc.contributor.authorK. H. Yoo-
dc.contributor.authorG. Ihm-
dc.contributor.authorS. K. Noh-
dc.date.accessioned2024-01-13T23:04:03Z-
dc.date.available2024-01-13T23:04:03Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112538-
dc.languageEnglish-
dc.subjectMOCVD-
dc.subjectGaAs-
dc.subjectHEMT-
dc.titleFabrication of quantum well high electron mobility transistor grown by MOCVD.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationBull. Korean phys. soc., v.v. 9, no.no. 2, pp.305 - ?-
dc.citation.titleBull. Korean phys. soc.-
dc.citation.volumev. 9-
dc.citation.numberno. 2-
dc.citation.startPage305-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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