A Novel CMOS Optoelectronic Receiver IC for Elder-Care LiDAR Sensors

Abstract

An optoelectronic receiver IC is presented for the applications of elder-care LiDAR sensors by utilizing a 180-nm CMOS technology, which consists of a spatially modulated P+/N-well avalanche photodiode (APD), A2V (amplitude-to-voltage) converter exploiting inverter-type transimpedance amplifier, and T2V (time-to-voltage) converter, respectively. Simulation results reveal that the analog A2V circuit recovers 1.0 μApp ~ 1.1 mApp input currents with an almost linear step with the help of external gain control scheme, while the T2V circuit acquires 64.4 dB input dynamic range with a linear voltage step of 160 mV for each 10-ns time interval. The chip dissipates 4.1 mW from a single 1.8-V supply.