Two-step chemical bath deposition enhanced mobility of PbS thin films

Authors
Chalapathi, U.Park, S.-H.Choi, W.J.
Issue Date
2021-12
Publisher
Elsevier Ltd
Citation
Materials Science in Semiconductor Processing, v.136
Abstract
A two-step chemical bath deposition (CBD) method that involves the deposition of films at two different bath temperatures is developed to enhance the grain growth and hole mobility of lead sulfide (PbS) thin films. The films deposited at three different conditions; first at 60 °C for 2 h, second at 30 °C for 1 h and at 60 °C for the subsequent 1 h, and finally at 60 °C for 1 h and at 30 °C for the subsequent hour. The deposition of PbS at only 60 °C for 2 h leads to the formation of cubic crystals with different sizes and hole mobility of 43.8 cm2V?1s?1. The deposition at a low temperature of 30 °C for the initial 1 h followed by the deposition at a high temperature of 60 °C for the subsequent hour increases the grain size and hole mobility to 62.2 cm2V?1s?1. However, the deposition of PbS at a high temperature of 60 °C for 1 h followed by the deposition at a low temperature of 30 °C for the subsequent hour decreases the grain size and hole mobility to 32.1 cm2V?1s?1. The PbS film deposited at low temperature in the first step acts as a seed layer for the growth of large-grained PbS in the second step. Thus, the two-step CBD method enhances the grain growth and hole mobility of PbS films. Hence, the two-step CBD method is very much useful for the growth of PbS for its applications in optoelectronic devices. ? 2021 Elsevier Ltd
Keywords
Grain growth; Grain size and shape; IV-VI semiconductors; Lead compounds; Microstructure; Optoelectronic devices; Sulfur compounds; Temperature; Thin films; Bath temperatures; Chemical bath deposition methods; Chemical-bath deposition; Grainsize; Highest temperature; Lows-temperatures; PbS thin film; Property; Thin-films; Two-step chemical bath deposition; Deposition; Grain growth; Grain size and shape; IV-VI semiconductors; Lead compounds; Microstructure; Optoelectronic devices; Sulfur compounds; Temperature; Thin films; Bath temperatures; Chemical bath deposition methods; Chemical-bath deposition; Grainsize; Highest temperature; Lows-temperatures; PbS thin film; Property; Thin-films; Two-step chemical bath deposition; Deposition; Bath temperature; Electrical properties; Microstructure; PbS thin films; Two-step CBD
ISSN
1369-8001
URI
https://pubs.kist.re.kr/handle/201004/116024
DOI
10.1016/j.mssp.2021.106147
Appears in Collections:
KIST Article > 2021
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE