Direct electrical characteristics of GaN nanowire field effect transistor (FET) without assistance of E-beam lithography (EBL)
- Authors
- Lee, Sang-Kwon; Seong, Han-Kyu; Choi, Ki-Chul; Cho, Narn-Kyu; Choi, Heon-Jin; Suh, Eun-Kyung; Nahm, Kee-Suk
- Issue Date
- 2006
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Citation
- International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), v.527-529, pp.1549 - 1552
- Abstract
- We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8 x 8 mm(2) silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 similar to 70 cm(2)/(VS)-S-.. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.
- ISSN
- 0255-5476
- URI
- https://pubs.kist.re.kr/handle/201004/116754
- DOI
- 10.4028/www.scientific.net/MSF.527-529.1549
- Appears in Collections:
- KIST Conference Paper > 2006
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