Direct electrical characteristics of GaN nanowire field effect transistor (FET) without assistance of E-beam lithography (EBL)

Authors
Lee, Sang-KwonSeong, Han-KyuChoi, Ki-ChulCho, Narn-KyuChoi, Heon-JinSuh, Eun-KyungNahm, Kee-Suk
Issue Date
2006
Publisher
TRANS TECH PUBLICATIONS LTD
Citation
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), v.527-529, pp.1549 - 1552
Abstract
We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8 x 8 mm(2) silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 similar to 70 cm(2)/(VS)-S-.. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.
ISSN
0255-5476
URI
https://pubs.kist.re.kr/handle/201004/116754
DOI
10.4028/www.scientific.net/MSF.527-529.1549
Appears in Collections:
KIST Conference Paper > 2006
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