Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer

Abstract

Three types of thin layer were inserted between 1st and 2nd separate confinement heterostructure (SCH) layer of 1.55 gm InGaAaP/InGaAs multi-quantum well (MQW) laser diodes. The three types were Type A (p-InGaAsP, 1x10(17)/cm(3)), Type B (p-InGaAsP, 2x10(18)/cm(3)), and Type C (p-InP, 2x10(18)/cm(3)), respectively. It was shown that the light-current (L-I) characteristics for those three types were similar, while the characteristic temperature (To) was higher for type B than others.