Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings

Authors
Jang, JuyeongLee, SeunghwanKim, MinjuWoo, SunwooKim, InhongKyhm, JihoonSong, JindongTaylor, Robert A.Kyhm, Kwangseuk
Issue Date
2020-11-23
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.117, no.21
Abstract
We have employed a variable stripe length method in order to measure the optical gain of GaAs/AlGaAs quantum rings. Although the large lateral diameter of quantum rings ( similar to 50nm) with a few nm size distribution is expected to cause a small spectral inhomogeneity ( similar to 1 %), a broad gain width ( similar to 300meV) was observed. This result was attributed to a variation of the vertical heights and variations in localized states that exhibit crescent shaped wavefunctions, whereby the energy levels are distributed over a broad spectral range. When the excitation intensity is decreased, irregular peaks appear in the gain spectrum gradually. Similar phenomena were also observed as the temperature increased. We conclude that excited carriers in quantum rings are distributed stochastically at various localized states and that the population inversion is sensitive to both excitation intensity and temperature.
Keywords
SATURATION; LASER; SATURATION; LASER; GaAs; droplet; quantum dots
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/117828
DOI
10.1063/5.0020890
Appears in Collections:
KIST Article > 2020
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