Carrier-phonon interaction of GaAs/Al0.3Ga0.7 As quantum dots grown by droplet epitaxy

Abstract

We examined several types of GaAs/Al0.3Ga0.7As quantum dots (QDs) grown by the droplet epitaxy (DE) technique. Using comparative optical analyses using multi-oscillator models, we investigated the individual exciton-phonon coupling channels of several QD types with different temperature dispersions. Each phonon dispersion was calculated for up to three different coupled modes in a phonon field. Nanoscale phonon engineering can exploit the dynamics of exciton-phonon interactions for the design of efficient acousto-excitonic devices and engineered QD single-photon sources.