Fabrication and estimation of characteristics for Nb-silicide FEAs

Abstract

Electron emission currents and stability in the silicon-tip field emission arrays (FEAs) have bee improved by silicide formation on silicon using Nb (Niobium). The formation of Nb-silicide was confirmed by X-Ray Diffraction (XRD) data. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47V and the emission current fluctuation was decreased from 5% to 2%.