Self-erasable titanium oxide resistive memory devices

Authors
Jang, JingonChoi, Han-HyeongKim, MinsungKim, Jai KyeongChung, SeungjunPark, Jong Hyuk
Issue Date
2019-10
Publisher
한국공업화학회
Citation
Journal of Industrial and Engineering Chemistry, v.78, pp.338 - 343
Abstract
We fabricated a titanium oxide (TiO2) resistive memory device utilized to naturally erasable device with a simple cross-bar array structure inhibiting sneak paths using selecting property. The Al/TiO2/Al memory device showed conventional nonvolatile and bipolar resistive switching properties with a vacancy-based drift conduction procedure. The conducting filament could be removed through redistribution of the oxygen vacancy to the active bulk region resulting in self-erasable properties, which have made it possible to guide unwanted information to be removed naturally. This self-erasable memory device has the potential to be utilized for the storage of susceptible information which should be eliminated after a sufficient length of time. (C) 2019 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
Keywords
SWITCHING MEMORY; NANOCROSSBAR; INTEGRATION; DIODE; Resistive memory; Self-erasable property; Titanium oxide; Oxygen vacancy; Conducting filament; Temporary data storage
ISSN
1226-086X
URI
https://pubs.kist.re.kr/handle/201004/119505
DOI
10.1016/j.jiec.2019.05.036
Appears in Collections:
KIST Article > 2019
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