Absorption coefficient estimation of thin MoS2 film using attenuation of silicon substrate Raman signal

Authors
Kwak, Joon Young
Issue Date
2019-06
Publisher
Elsevier BV
Citation
Results in Physics, v.13
Abstract
A simple, non-destructive, and convenient method using Raman spectroscopy and Atomic Force Microscopy for extracting the absorption coefficient of MoS2 is presented. The attenuation of the substrate Raman signal intensity due to the MoS2 overlayer is found to be dependent on the MoS2 film thickness estimated from the AFM measurements. Using the light attenuation model from the measurements, the experimentally extracted absorption coefficient of the thin MoS2 flakes is determined to be 2.8x10(6) cm(-1). This simple technique is capable of estimating the absorption coefficient of other two-dimensional layered materials.
Keywords
FIELD-EFFECT TRANSISTORS; GRAPHENE; THICKNESS; MoS2; Absorption coefficient; Substrate Raman; Attenuation
ISSN
2211-3797
URI
https://pubs.kist.re.kr/handle/201004/119960
DOI
10.1016/j.rinp.2019.102202
Appears in Collections:
KIST Article > 2019
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