Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Authors
Jeon, Dae-YoungKim, Do-KywnPark, So JeongKoh, YuminCho, Chu-YoungKim, Gyu-TaePark, Kyung-Ho
Issue Date
2018-11-05
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v.199, pp.40 - 44
Abstract
The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.
Keywords
ADVANCED CMOS DEVICES; RTS FLUCTUATIONS; NOISE; SENSORS; MOSFETS; LEAKAGE; GATE; ADVANCED CMOS DEVICES; RTS FLUCTUATIONS; NOISE; SENSORS; MOSFETS; LEAKAGE; GATE; AlGaN/GaN HEMTs; Effective mobility; Low-frequency noise and carrier number fluctuation model; Mobility degradation factors; Series resistance
ISSN
0167-9317
URI
https://pubs.kist.re.kr/handle/201004/120699
DOI
10.1016/j.mee.2018.07.010
Appears in Collections:
KIST Article > 2018
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