Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors
- Authors
- Jeon, Dae-Young; Kim, Do-Kywn; Park, So Jeong; Koh, Yumin; Cho, Chu-Young; Kim, Gyu-Tae; Park, Kyung-Ho
- Issue Date
- 2018-11-05
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- MICROELECTRONIC ENGINEERING, v.199, pp.40 - 44
- Abstract
- The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.
- Keywords
- ADVANCED CMOS DEVICES; RTS FLUCTUATIONS; NOISE; SENSORS; MOSFETS; LEAKAGE; GATE; ADVANCED CMOS DEVICES; RTS FLUCTUATIONS; NOISE; SENSORS; MOSFETS; LEAKAGE; GATE; AlGaN/GaN HEMTs; Effective mobility; Low-frequency noise and carrier number fluctuation model; Mobility degradation factors; Series resistance
- ISSN
- 0167-9317
- URI
- https://pubs.kist.re.kr/handle/201004/120699
- DOI
- 10.1016/j.mee.2018.07.010
- Appears in Collections:
- KIST Article > 2018
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