Highly Reliable Superhydrophobic Protection for Organic Field-Effect Transistors by Fluoroalkylsilane-Coated TiO2 Nanoparticles

Authors
Yoo, DaekyoungKim, YoungrokMin, MisookAhn, Geun HoLien, Der-HsienJang, JingonJeong, HyunhakSong, YounggulChung, SeungjunJayey, AliLee, Takhee
Issue Date
2018-11
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.12, no.11, pp.11062 - 11069
Abstract
One of the long-standing problems in the field of organic electronics is their instability in an open environment, especially their poor water resistance. For the reliable operation of organic devices, introducing an effective protection layer using organo-compatible materials and processes is highly desirable. Here, we report a facile method for the depositing of an organo-compatible superhydrophobic protection layer on organic semiconductors under ambient conditions. The protection layer exhibiting excellent water-repellent and self-cleaning properties was deposited onto organic semiconductors directly using a dip-coating process in a highly fluorinated solution with fluoroalkylsilane-coated titanium dioxide (TiO2) nanoparticles. The proposed protection layer did not damage the underlying organic semiconductors and had good resistance against mechanical-, thermal-, light -stress-, and water-based threats. The protected organic field-effect transistors exhibited more reliable electrical properties, even when exposed to strong solvents, due to its superhydrophobicity. This study provides a practical solution with which to enhance the reliability of environmentally sensitive organic semiconductor devices in the natural environment.
Keywords
THIN-FILM TRANSISTORS; PERFORMANCE; SURFACES; TRANSPARENT; PATTERNS; COATINGS; UNIPOLAR; IMPACT; PATH; THIN-FILM TRANSISTORS; PERFORMANCE; SURFACES; TRANSPARENT; PATTERNS; COATINGS; UNIPOLAR; IMPACT; PATH; superhydrophobic surface; organic semiconductor; nanoparticles; reliability; organic electronics
ISSN
1936-0851
URI
https://pubs.kist.re.kr/handle/201004/120755
DOI
10.1021/acsnano.8b05224
Appears in Collections:
KIST Article > 2018
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