Development of organic-inorganic double hole-transporting material for high performance perovskite solar cells
- Authors
- Jo, Jea Woong; Seo, Myung-Seok; Jung, Jae Woong; Park, Joon-Suh; Sohn, Byeong-Hyeok; Ko, Min Jae; Son, Hae Jung
- Issue Date
- 2018-02-28
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- JOURNAL OF POWER SOURCES, v.378, pp.98 - 104
- Abstract
- The control of the optoelectronic properties of the interlayers of perovskite solar cells (PSCs) is crucial for achieving high photovoltaic performances. Of the solution-processable interlayer candidates, NiOx is considered one of the best inorganic hole-transporting layer (HTL) materials. However, the power conversion efficiencies (PCEs) of NiOx-based PSCs are limited by the unfavorable contact between perovskite layers and NiOx HTLs, the high density of surface trap sites, and the inefficient charge extraction from perovskite photoactive layers to anodes. Here, we introduce a new organic-inorganic double HTL consisting of a Cu:NiOx thin film passivated by a conjugated polyelectrolyte (PhNa-1T) film. This double HTL has a significantly lower pinhole density and forms better contact with perovskite films, which results in enhanced charge extraction. As a result, the PCEs of PSCs fabricated with the double HTL are impressively improved up to 17.0%, which is more than 25% higher than that of the corresponding PSC with a Cu:NiOx HTL. Moreover, PSCs with the double HTLs exhibit similar stabilities under ambient conditions to devices using inorganic Cu:NiOx. Therefore, this organic-inorganic double HTL is a promising interlayer material for high performance PSCs with high air stability.
- Keywords
- STABLE PLANAR PEROVSKITE; LOW-TEMPERATURE; EXTRACTION LAYER; BASE ADDUCT; EFFICIENT; CRYSTALLIZATION; DEPOSITION; STABILITY; STABLE PLANAR PEROVSKITE; LOW-TEMPERATURE; EXTRACTION LAYER; BASE ADDUCT; EFFICIENT; CRYSTALLIZATION; DEPOSITION; STABILITY; Perovskite solar cell; Hole-transporting layer; Interfacial engineering; Photovoltaics; Conjugated polyelectrolyte
- ISSN
- 0378-7753
- URI
- https://pubs.kist.re.kr/handle/201004/121688
- DOI
- 10.1016/j.jpowsour.2017.12.024
- Appears in Collections:
- KIST Article > 2018
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