DSpace at KISTKIST PublicationArticle

SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)

Title
SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)
Authors
S. Im; 송종한; D.Y.C. Lie; F. Eisen; H. Atwater; M-A. Nicolet
Keywords
doping; SiGeC; ion implantation; strain
Issue Date
1997-02
Publisher
Journal of applied physics.
Citation
VOL 81, NO 4, 1700-1703
URI
https://pubs.kist.re.kr/handle/201004/12180
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Full Item Record


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE