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dc.contributor.authorRhyee, Jong-Soo-
dc.contributor.authorKwon, Junyeon-
dc.contributor.authorDak, Piyush-
dc.contributor.authorKim, Jin Hee-
dc.contributor.authorKim, Seung Min-
dc.contributor.authorPark, Jozeph-
dc.contributor.authorHong, Young Ki-
dc.contributor.authorSong, Won Geun-
dc.contributor.authorOmkaram, Inturu-
dc.contributor.authorAlam, Muhammad A.-
dc.contributor.authorKim, Sunkook-
dc.date.accessioned2024-01-20T04:33:38Z-
dc.date.available2024-01-20T04:33:38Z-
dc.date.created2021-09-04-
dc.date.issued2016-03-23-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/124277-
dc.description.abstractLarge-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1)s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectGRAIN-BOUNDARIES-
dc.subjectDIRECT BANDGAP-
dc.subjectATOMIC LAYERS-
dc.subjectTHIN-
dc.subjectTRANSPORT-
dc.titleHigh-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates-
dc.typeArticle-
dc.identifier.doi10.1002/adma.201504789-
dc.description.journalClass1-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.28, no.12, pp.2316 - 2321-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume28-
dc.citation.number12-
dc.citation.startPage2316-
dc.citation.endPage2321-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000372459600003-
dc.identifier.scopusid2-s2.0-84961780738-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusGRAIN-BOUNDARIES-
dc.subject.keywordPlusDIRECT BANDGAP-
dc.subject.keywordPlusATOMIC LAYERS-
dc.subject.keywordPlusTHIN-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordAuthorinsulating substrates-
dc.subject.keywordAuthorMoSe2-
dc.subject.keywordAuthorsingle-crystals-
dc.subject.keywordAuthorthin-film transistors-
dc.subject.keywordAuthortransition metal dichalcogenides-
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