Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation

Abstract

Two-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p-and n-type semiconductors were fabricated on both glass and SiO2/p(+)-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted.