lsoindigo-Based Donor-Acceptor Conjugated Polymers for Air-Stable Nonvolatile Memory Devices
- Authors
- Elsawy, Walaa; Son, Myungwoo; Jang, Jisu; Kim, Myung Jin; Ji, Yongsung; Kim, Tae-Wook; Ko, Heung Cho; Elbarbary, Ahmed; Ham, Moon-Ho; Lee, Jae-Suk
- Issue Date
- 2015-03
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS MACRO LETTERS, v.4, no.3, pp.322 - 326
- Abstract
- Nonvolatile resistive memory devices based on a new low bandgap donor acceptor (D-A) conjugated polymer, poly((E)-6,6'-bis(2,3-dihydrothieno[3,4-b] [1,4] dioxine-5-y1) -1,1'-bis (2-octyldo decyl)-[3,3'-biindolinyi-dene3-2,2'-dione) (PIDED), which are fabricated and operated in ambient air, are reported. The D-A conjugated polymer is synthesized from 2,3dihydrothieno[3,4-b][1,4]dioxine and isoindigo as an electron donor and an electron acceptor, respectively, using CH-arylation polymerization. The devices show nonvolatile, unipolar resistive switching behaviors with a high on/off current ratio (similar to 10(4)), excellent endurance cycles (>200 cycles), and a long retention time (>10(4) s) in ambient air. These properties remain stable in ambient air over one year, demonstrating that the device performance is significantly unaffected by exposure to air as the isoindigo has strong electron-withdrawing character and the PIDED exhibits a high degree of crystallinity. This study may pave the way for use of practical nonvolatile organic memory devices operating in ambient air.
- Keywords
- FIELD-EFFECT TRANSISTORS; RESISTIVE MEMORY; THIN-FILM; PERFORMANCE; INTEGRATION; MECHANISM; COPOLYMER; FIELD-EFFECT TRANSISTORS; RESISTIVE MEMORY; THIN-FILM; PERFORMANCE; INTEGRATION; MECHANISM; COPOLYMER; Organic memory; conjugated polymer
- ISSN
- 2161-1653
- URI
- https://pubs.kist.re.kr/handle/201004/125737
- DOI
- 10.1021/mz500698p
- Appears in Collections:
- KIST Article > 2015
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