Experimental demonstration of a ferroelectric FET using paper substrate

Abstract

A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (V-TH) window of similar to 20V for the transistor on paper. An on/off current ratio of similar to 10(2) is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).