Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2 Nanosheet Transistor Channel

Abstract

Two MoS2 field-effect transistors are compared using graphene and Au/Ti source-drain contacts in respects of their Ohmic and OFF behavior on an identical MoS2 nanosheet. As a result, graphene-contact appears not only to show superior ohmic behavior to those of Au/Ti but also more enhanced OFF state behavior. Such results are attributed to the electric-field-induced work function tuning of exfoliated graphene.