L1(0) ordering of FePtB layers by oxidation-induced stress of capping layer

Authors
Choi, Gyung-MinMin, Byoung-ChulShin, Kyung-Ho
Issue Date
2013-05
Publisher
SPRINGER HEIDELBERG
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.111, no.2, pp.389 - 394
Abstract
We have studied the L1(0) ordering of FePtB layers assisted by the oxidation-induced stress of a capping layer. In the thermally oxidized Si substrate/MgO/CoFeB/FePtB/ Ti structure, the oxidation of the Ti capping layer during post-deposition annealing exerts an in-plane tensile stress on the FePtB layer, which promotes L1(0) ordering of the FePtB layer. The diffusion of boron from the FePtB layer into the Ti layer also plays a crucial role in the L1(0) ordering. The CoFeB/FePtB composite layers can be used for the top electrode of perpendicular magnetic tunnel junctions.
Keywords
THIN-FILMS; TUNNEL MAGNETORESISTANCE; TEXTURE
ISSN
0947-8396
URI
https://pubs.kist.re.kr/handle/201004/128099
DOI
10.1007/s00339-012-7512-3
Appears in Collections:
KIST Article > 2013
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE