Three-Dimensional Bi2Te3 Nanocrystallites Embedded in 2D Bi2Te3 Films Grown by MOCVD

Authors
You, HyunwooBaek, Seung HyubKim, Chang KyoLyeo, Ho-KiPark, ChanKim, Jin-Sang
Issue Date
2012-06
Publisher
SPRINGER
Citation
JOURNAL OF ELECTRONIC MATERIALS, v.41, no.6, pp.1237 - 1241
Abstract
Two- (2D) and three-dimensional (3D) growth of nanostructured Bi2Te3 films was performed on 4A degrees tilt (100) GaAs substrates using a metalorganic chemical vapor deposition system. To obtain 3D Bi2Te3 crystallites embedded in 2D planar film, we alternately changed the gas flow rate in the reactor. By repeating two steps, 3D Bi2Te3 crystallites embedded in 2D planar Bi2Te3 film were obtained. The thermoelectric properties in terms of the thermal conductivity, electrical conductivity, and Seebeck coefficient were investigated at room temperature. The thermal conductivities of the nanostructured Bi2Te3 films were from 0.63 W/(m K) to 0.94 W/(m K) at room temperature, which are low compared with that of film without nanostructure [1.62 W/(m K)]. The thermal conductivity of the film was effectively decreased with the decrease of size and increase of density of 3D crystallites. The results of this study open up a new method to fabricate nanostructured thermoelectric films with high thermoelectric figure of merit.
Keywords
THERMOELECTRIC PROPERTIES; THERMOELECTRIC PROPERTIES; MOCVD; Bi2Te3; thermoelectric; nanostructure
ISSN
0361-5235
URI
https://pubs.kist.re.kr/handle/201004/129214
DOI
10.1007/s11664-012-1953-5
Appears in Collections:
KIST Article > 2012
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