Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition

Authors
Kim, KyoungwonLee, Deuk-HeeLee, Sang YeolJang, Gun-EikKim, Jin-Sang
Issue Date
2012-05-30
Publisher
SPRINGEROPEN
Citation
NANOSCALE RESEARCH LETTERS, v.7
Abstract
Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A(0)X). The A(0)X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (E (a)) of the A(0)X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs.
Keywords
THIN-FILMS; ELECTRICAL-PROPERTIES; PHOTOLUMINESCENCE; FABRICATION; NANORODS; THIN-FILMS; ELECTRICAL-PROPERTIES; PHOTOLUMINESCENCE; FABRICATION; NANORODS; SAZO nanowire; Photoluminescence; Ag/Al co-doping method; Exciton bound to a neutral acceptor
ISSN
1931-7573
URI
https://pubs.kist.re.kr/handle/201004/129241
DOI
10.1186/1556-276X-7-273
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KIST Article > 2012
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