Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread

Abstract

The electrical and optical properties of Ga-doped ZnO (GZO) thin films deposited at different substrate temperatures have been studied by a continuous composition spread (CCS) method. The full range of GZO compositions deposited at different substrate temperatures was explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 9.6 x 10(-4) Omega, cm and an average transmittance above 89% in the 400-700 nm wavelength regions were able to be formed at a substrate temperature of 100 degrees C. Optimized composition of the GZO thin film which had the lowest resistivity and highest transmittance was found at 0.8 wt% Ga2O3 doped ZnO. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.