Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy

Authors
Shon, YoonLee, SejoonYoon, Im TaekJeon, H. C.Lee, D. J.Kang, T. W.Song, J. D.Yoon, Chong S.Kim, D. Y.Park, C. S.
Issue Date
2011-11-07
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.99, no.19
Abstract
The p-type InMnP: Be epilayers were prepared by the sequential growth of Mn/InP: Be bilayers using molecular-beam-epitaxy and the subsequent in-situ annealing at 200-300 degrees C. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InMnP. The ferromagnetic transition in InMnP: Be was observed to occur at the elevated temperature of similar to 140 K, and the ferromagnetic spin-domains clearly appeared in magnetic force microscopy images. The improved ferromagnetic properties are attributed to the increased p-d hybridation due to high p-type conductivity of InMnP: Be (p similar to 10(20) cm(-3)). The results suggest that enhanced ferromagnetism can be effectively obtained from Be-codoped InMnP. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3660274]
Keywords
NEUTRAL MANGANESE ACCEPTOR; INP; MN; SEMICONDUCTORS; NEUTRAL MANGANESE ACCEPTOR; INP; MN; SEMICONDUCTORS; InMnP; molecular beam epitaxy; ferromagnetism
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/129809
DOI
10.1063/1.3660274
Appears in Collections:
KIST Article > 2011
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