Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

Authors
Jeon, Kun-RokMin, Byoung-ChulJo, Young-HunLee, Hun-SungShin, Il-JaePark, Chang-YupPark, Seung-YoungShin, Sung-Chul
Issue Date
2011-10
Publisher
AMER PHYSICAL SOC
Citation
Physical Review B, v.84, no.16
Abstract
We report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Gecontact at room temperature (RT), employing three-terminal Hanle measurements. A sizable spin signal of similar to 170 k Omega mu m(2) has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of similar to 120 ps and a spin diffusion length of similar to 683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.
Keywords
METAL/TUNNEL BARRIER CONTACT; SILICON; SEMICONDUCTOR; SPINTRONICS; TRANSPORT; METALS
ISSN
2469-9950
URI
https://pubs.kist.re.kr/handle/201004/129933
DOI
10.1103/PhysRevB.84.165315
Appears in Collections:
KIST Article > 2011
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