Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots

Abstract

In this study, we have attempted a growth of InSb film on the cost-effective, (001)-Si substrate inserting a thin intermediate-layer of In As quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subsequent InSb-growth process, InAs QDs have disappeared leaving instead a thin interlayer of InAs. The resulting 2.8-mu m-thick InSb film on (001) Si is found to have an electron mobility of 40 907 cm(2)/Vs at 300K, which turned out to be the highest value for InSb with comparable thickness grown on Si substrate. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim