Deposition of Cr-doped SrZrO3 thin films on Si substrates and their resistance switching characteristics

Abstract

Cr-doped SrZrO3 perovskite thin films were deposited on SrRuO3 bottom electrode/SiO2/Si(100) substrates by pulsed laser deposition. The SrZrO3 : Cr perovskite and SrRuO3 bottom electrode showed a well controlled interface, as well as good resistive switching behavior with an ON/OFF ratio > 10(3). Resistive switching memory devices made from Cr-doped SrZrO3 thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.