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dc.contributor.authorBouzid, Abdessattar-
dc.contributor.authorPark, Jun-Bum-
dc.contributor.authorKim, Se Min-
dc.contributor.authorKwak, Sean-
dc.contributor.authorMoon, Sung-
dc.date.accessioned2024-01-20T17:03:26Z-
dc.date.available2024-01-20T17:03:26Z-
dc.date.created2021-09-02-
dc.date.issued2011-05-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/130390-
dc.description.abstractTo better understand how the active hold-off technique in single-photon detectors (SPDs) based on InGaAs/InP avalanche photodiodes (APDs) enhances the performance of a quantum key distribution (QKD) system based on the BB84 protocol, we have evaluated the dependence of the raw key creation rate (R-raw) as well as the quantum bit error rate (QBER) on the number of active hold-off gates. The results of our analysis reveal that at 10 MHz repetition rate of the gate, by holding-off 200 gate pulses immediately following an avalanche event, the afterpulse contribution to the QBER drops down to 2.35% without noticeable decrease in the R-raw. (c) 2010 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.subjectHIGH-PERFORMANCE-
dc.subject1550 NM-
dc.subjectPHOTODIODES-
dc.titleCharacterization of a single-photon detector at 1.55 mu m operated with an active hold-off technique for quantum key distribution-
dc.typeArticle-
dc.identifier.doi10.1016/j.cap.2010.12.017-
dc.description.journalClass1-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.11, no.3, pp.903 - 908-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume11-
dc.citation.number3-
dc.citation.startPage903-
dc.citation.endPage908-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001555655-
dc.identifier.wosid000288183300122-
dc.identifier.scopusid2-s2.0-79951671662-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlus1550 NM-
dc.subject.keywordPlusPHOTODIODES-
dc.subject.keywordAuthorAvalanche photodiode-
dc.subject.keywordAuthorSingle-photon detector-
dc.subject.keywordAuthorQuantum key distribution-
dc.subject.keywordAuthorRaw key creation rate-
dc.subject.keywordAuthorQuantum bit error rate-
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